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| Low Noise, Cascadable Silicon Bipolar MMIC Amplifier Technical Data INA-03100 Features * Cascadable 50 Gain Block * Low Noise Figure: 2.5 dB Typical at 1.5 GHz * High Gain: 26.0 dB Typical at 2.8 GHz * 3 dB Bandwidth: DC to 2.8 GHz * Unconditionally Stable (k>1) * Low Power Consumption require high gain and low noise IF or RF amplification with minimum power consumption. The INA series of MMICs is fabricated using HP's 10 GHz fT, 25 GHz fMAX, ISOSATTM-I silicon bipolar process which uses nitride self-alignment, submicrometer lithography, trench isolation, ion implantation, gold metallization and polyimide intermetal dielectric and scratch protection to achieve excellent performance, uniformity and reliability. The recommended assembly procedure is gold-eutectic die attach at 400C and either wedge or ball bonding using 0.7 mil gold wire.[1] Chip Outline[1] C M 7891 KA RF OUT (3) GND 2 (2) (4) Description The INA-03100 is a low-noise silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) feedback amplifier chip. It is designed for narrow or wide bandwidth commercial, industrial and military applications that 30AN (1) RF IN GND 1 Note: 1. See Application Note, "A005: Transistor Chip Use" for additional information. Typical Biasing Configuration VCC RFC (Optional) Rbias Cblock RF IN 1 2 4 3 Vd = 5.5 V (Nominal) Cblock RF OUT 5965-9676E 6-102 INA-03100 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 50 mA 200 mW +13 dBm 200C -65 to 200C Thermal Resistance[2]: jc = 70C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TMounting Surface (TMS) = 25C. 3. Derate at 14.3 mW/C for TMS > 186C. INA-03100 Electrical Specifications[1,3], TA = 25C Symbol GP GP f3 dB ISO VSWR NF P1 dB IP3 tD Vd dV/dT Parameters and Test Conditions[2]: Id = 12 mA, ZO = 50 Power Gain (|S21| 2) Gain Flatness 3 dB Bandwidth Reverse Isolation (|S12| 2) Input VSWR Output VSWR 50 Noise Figure Output Power at 1 dB Gain Compression Third Order Intercept Point Group Delay Device Voltage Device Voltage Temperature Coefficient f = 0.01 to 2.0 GHz f = 0.01 to 2.0 GHz f = 0.01 to 2.0 GHz f = 1.5 GHz f = 1.5 GHz f = 1.5 GHz f = 1.5 GHz f = 1.5 GHz f = 1.5 GHz f = 0.01 to 2.0 GHz Units dB dB GHz dB Min. Typ. 26.0 0.5 2.8 37 2.05 3.05 Max. dB dBm dBm psec V mV/C 3.5 2.5 1.0 10 200 4.5 + 5 5.5 Notes: 1. The recommended operating current range for this device is 8 to 20 mA. Typical performance as a function of current is on the following page. 2. RF performance of the chip is determined by packaging and testing 10 devices per wafer. 3. The values are the achievable performance for the INA-03100 mounted in a 70 mil stripline package. INA-03100 Typical Scattering Parameters[1] (ZO = 50 , TA = 25C, Id = 12 mA) Freq. GHz S11 Mag Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang k 0.05 0.10 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00 2.50 3.00 0.35 0.35 0.33 0.31 0.27 0.23 0.19 0.16 0.13 0.12 0.13 0.18 0.40 0.81 176 172 165 150 137 125 113 99 76 51 21 -5 -52 -86 26.6 26.6 26.4 26.1 25.6 25.0 24.5 24.0 23.8 23.6 23.6 23.8 24.7 25.6 21.4 21.3 21.0 20.1 19.0 17.8 16.7 15.9 15.4 15.2 15.5 15.5 17.2 19.1 -4 -8 -15 -29 -42 -53 -63 -72 -81 -88 -97 -106 -132 -167 -36.0 -36.5 -36.4 -36.0 -37.6 -36.1 -35.1 -36.9 -36.4 -35.6 -34.1 -34.3 -30.2 -27.0 .016 .015 .015 .016 .013 .016 .018 .014 .015 .017 .020 .019 .031 .045 8 -4 -5 -13 -14 -13 -16 -21 -12 -11 -5 -13 -9 -12 .56 .56 .56 .54 .54 .53 .53 .54 .55 .56 .58 .60 .67 .70 -1 -3 -4 -7 -8 -9 -10 -12 -15 -17 -20 -25 -38 -64 1.25 1.30 1.30 1.33 1.58 1.49 1.43 1.72 1.65 1.54 1.24 1.18 0.53 0.03 Note: 1. S-parameters are de-embedded from 70 mil package measured data using the package model found in the DEVICE MODELS section of the Avantek Microwave Semiconductors databook. 6-103 INA-03100 Typical Performance, TA = 25C (unless otherwise noted: The values are the achievable performance for the INA-03100 mounted in a 70 mil stripline package.) 30 Gain Flat to DC 20 25 4.0 5.0 25 TMS = +125C TMS = +25C TMS = -55C 30 f = 0.1 - 2 GHz 25 f = 3 GHz Id (mA) NF (dB) Id (mA) 15 Gp (dB) 20 3.0 20 f = 4 GHz 15 10 15 2.0 5 10 0.1 0.2 0.5 1.0 2.0 1.0 5.0 0 0 2 4 Vd (V) 6 8 10 10 5 10 15 Id (mA) 20 25 FREQUENCY (GHz) Figure 1. Typical Gain and Noise Figure vs. Frequency, TA = 25C, Id = 12 mA. Figure 2. Device Current vs. Voltage. Figure 3. Power Gain vs. Current. 27 8 Gp 4 P1 dB 4 2 5.0 Gp (dB) 26 25 24 Id = 20 mA 4.0 P1 dB (dBm) P1 dB (dBm) Id = 12 mA 0 Id = 8 mA -4 NF (dB) 3.0 3.5 0 -2 NF Id = 8 mA NF (dB) 2.0 2.5 1.0 1.5 -55 -25 +25 +85 2.0 Id = 12 to 20 mA +125 -8 0.1 0.2 0.5 1.0 2.0 5.0 1.0 0.1 0.2 0.5 1.0 2.0 5.0 TEMPERATURE (C) FREQUENCY (GHz) FREQUENCY (GHz) Figure 4. Output Power and 1 dB Gain Compression, NF and Power Gain vs. CaseTemperature, f = 1.5 GHz, Id = 12 mA. Figure 5. Output Power at 1 dB Gain Compression vs. Frequency. Figure 6. Noise Figure vs. Frequency. INA-03100 Chip Dimensions C M 7891 KA RF OUT (3) GND 2 (2) 500 13 m 19.7 0.5 mil (4) 30AN (1) RF IN GND 1 375 13 m 14.8 0.5 mil Chip thickness is 140 m/5.5 mil. Bond Pads are 41 m/1.6 mil typical on each side. Note: Ground Bonding is Critical. Refer to Application Bulletin, "AB-0007: INA Bonding Configuration". 6-104 |
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